Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
The document describes the NXP BUK7515-100A, an N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology in a plastic TO-220AB package. The device is qualified to AEC standards for use in automotive critical applications and features low conduction losses due to its low on-state resistance.
Key specifications include a maximum drain-source voltage of 100 V, a continuous drain current of up to 75 A at 25 °C, and a total power dissipation of 300 W. The datasheet provides detailed information on pinning, limiting values, thermal characteristics, electrical parameters such as capacitance and switching times, and safe operating areas.
| Total power dissipation (PD) | 300 W |
|---|---|
| Package type | TO-220AB plastic single-ended package |
| Technology | TrenchMOS |
The maximum total power dissipation is 300 W.
The maximum drain-source voltage is 100 V.
The maximum continuous drain current is 75 A.