NXP BUK9640-100A FET Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.


NXP BUK9640-100A FET Datasheet - cover page
Brand
NXP
Category
FET
Document type
Datasheet
Language
English
Pages
14
File format
PDF
File size
292 KB
Published
23 May, 2014
Updated
25 September, 2023
MD5 checksum
76759292AD1FB32E0CF7C4E9182021FF

About this manual

The NXP BUK9640-100A is a logic level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. It is packaged in a plastic D2PAK (SOT404) case and is designed and qualified to appropriate AEC standards for use in automotive critical applications.

Key features include low conduction losses due to low on-state resistance, compliance with Q101 standards, and suitability for logic level gate drive sources. The device is rated for thermally demanding environments with a junction temperature of 175 °C.

What's inside

  • General description
  • Features and benefits
  • Applications
  • Quick reference data
  • Pinning information
  • Ordering information
  • Limiting values
  • Thermal characteristics
  • Characteristics
  • Export control

Specifications

PackageD2PAK (SOT404)

Frequently asked questions

Is the BUK9640-100A compliant with Q101 standards?

Yes, the product is Q101 compliant.

What is the maximum junction temperature rating for this FET?

The device has a rated junction temperature of up to 175 °C.

What is the maximum continuous drain current at a mounting base temperature of 25 °C?

The maximum continuous drain current is 39 A when the mounting base temperature is 25 °C.

What is the maximum total power dissipation at a mounting base temperature of 25 °C?

The maximum total power dissipation is 158 W when the mounting base temperature is 25 °C.

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