NXP Semiconductors BUK953R2-40B FET Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Brand: NXP
Category: FET
Document type: Datasheet
Language: English
Pages: 14
File format: PDF
File size: 286 KB
Published: 23 May, 2014
Updated: 25 September, 2023
MD5 checksum: 4BD836C6CF785A60AC1254D4C13EE816
PDF: NXP Semiconductors BUK953R2-40B FET Datasheet PDF

About this manual

The document is a product data sheet for the BUK953R2-40B, an N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. It is specifically designed and qualified according to appropriate AEC standards for use in automotive critical applications.

What's inside

General description
Features and benefits
Applications
Quick reference data
Pinning information
Ordering information
Limiting values
Thermal characteristics
Characteristics

Frequently asked questions

What is the maximum junction temperature rating for this FET?

The device is rated for a maximum junction temperature of 175 °C.

What is the maximum total power dissipation at a mounting base temperature of 25 °C?

The maximum total power dissipation is 300 W at a mounting base temperature of 25 °C.

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