Key facts
- Brand
- STMicroelectronics
- Model
- PSD913F2
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-01
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STMicroelectronics PSD913F2/PSD934F2/PSD954F2 Preliminary Information
The PSD9XX family provides configurable memory systems for 8‑bit microcontrollers, offering up to 2 Mbit of primary flash, a 256 Kbit secondary flash, up to 256 Kbit SRAM, and more than 2,000 gates of programmable logic. The devices include 27 reconfigurable I/O ports, programmable power management, and a JTAG‑compliant serial port for in‑system programming.
Programming can be performed via In‑System Programming (ISP) using the JTAG interface or In‑Application Programming (IAP) where the MCU accesses one flash while the other is being programmed. The built‑in power‑management unit supports automatic power‑down, and the devices operate from a single 5 V (±10 %) or 3.3 V (±10 %) supply. Standby current can be as low as 50 µA for 5 V parts.
STMicroelectronics PSD913F2 specifications
| Single Supply Voltage (3.3 V version) | 3.3 V ±10 % |
|---|---|
| Primary Flash Memory | up to 2 Mbit |
| Secondary Flash Memory | 256 Kbit |
| SRAM | up to 256 Kbit |
| Programmable Logic Gates | over 2,000 gates |
| Flash Endurance | ≥ 100,000 erase/write cycles |
| PLD Endurance | ≥ 1,000 erase/write cycles |
| Data Retention | 15 years |
Source: STMicroelectronics PSD913F2/PSD934F2/PSD954F2 Preliminary Information
All STMicroelectronics PSD913F2 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
How many erase/write cycles can the flash memory and PLD handle?
The flash memory is rated for at least 100,000 erase/write cycles, while the PLD is rated for at least 1,000 cycles.
From: STMicroelectronics PSD913F2/PSD934F2/PSD954F2 Preliminary Information
What is the maximum primary flash memory size for the PSD9xxF2 devices?
Each device can contain up to 2 Mbit of primary flash memory.
What is the endurance of the flash memory in the PSD9xxF2 devices?
The flash memory is rated for a minimum of 100,000 erase/write cycles.