STMicroelectronics M29F002BT Manuals

2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory I SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS I ACCESS TIME: 45 ns I PROGRAMMING TIME – 8 µs by Byte typical I 7 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 4 Main Blocks I PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits I ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend I UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming I TEMPORARY BLOCK UNPROTECTION MODE I LOW POWER CONSUMPTION – Standby and Automatic Standby I 100,000 PROGRAM/ERASE CYCLES per BLOCK I 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year I ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code M29F002BT: B0h – Top Device Code M29F002BNT: B0h – Bottom Device Code M29F002BB: 34h – Bottom Device Code M29F002BNB: 34h

M29F002BT, M29F002BNT 2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory provides a single 5V ± 10% supply voltage for program, erase, and read operations, with 45 ns access time, 8 µs byte programming time, and 7 memory blocks. The memory includes 1 boot block (top or bottom location), 2 parameter blocks, and 4 main blocks. The device features embedded byte program algorithm, embedded multi-block/chip erase algorithm, status register polling and toggle bits, erase suspend and resume modes, read and program another block during erase suspend mode, unlock bypass program command, faster production/batch programming, temporary block unprotection mode, low power consumption (standby and automatic standby), 100,000 program/erase cycles/block, and 20 years data retention (defectivity below 1 ppm/year). Electronic signature includes manufacturer code (20h), top device code M29F002BT (B0h), top device code M29F002BNT (B0h), bottom device code M29F002BB (34h), and bottom device code M29F002BNB (34h).