2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory I SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS I ACCESS TIME: 45 ns I PROGRAMMING TIME – 8 µs by Byte typical I 7 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 4 Main Blocks I PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits I ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend I UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming I TEMPORARY BLOCK UNPROTECTION MODE I LOW POWER CONSUMPTION – Standby and Automatic Standby I 100,000 PROGRAM/ERASE CYCLES per BLOCK I 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year I ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code M29F002BT: B0h – Top Device Code M29F002BNT: B0h – Bottom Device Code M29F002BB: 34h – Bottom Device Code M29F002BNB: 34h
The document describes the M29F002BT, M29F002BB, M29F002BNT, and M29F002BNB series of 2Mbit (256Kb x8) non-volatile flash memory devices. These single-supply 5V devices support read, erase, and reprogram operations with access times as low as 45ns.
The device requires a single 5V supply with a tolerance of +10% for all program, erase, and read operations.
Each block is rated for 100,000 program/erase cycles.