STMicroelectronics M29W160EB Manuals

M29W160ET M29W160EB is a 16Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V supply flash memory with a voltage range of 2.7V to 3.6V for program, erase and read. This product has 70, 90ns of access time, 10µs of programming time, 35 memory blocks, 1 boot block (top or bottom location) - 2 parameters and 32 main blocks. Its program/erase controller has embedded byte/word programming algorithms, erase suspend and resume modes allow reading and programming another block, and erase suspend time also supports bypass programming commands for faster production/batch programming. In addition, the product also supports temporary block non-protection mode, 64-bit security code, low power consumption (standby and automatic standby) and 100,000 programming/erase cycles/block. The electronic signature includes the manufacturer code (0020h), top device code (M29W160ET: 22C4h) and bottom device code (M29W160EB: 2249h). The product supports TSOP48 (N) and TFBGA48 (ZA) two packages.

M29W160ET M29W160EB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory provides 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory. It has a supply voltage of 2.7V to 3.6V, 70, 90ns access time, 10µs per byte/word typical programming time, 35 memory blocks, 1 boot block (top or bottom location), 2 parameters and 32 main blocks, embedded byte/word programming algorithms of the program/erase controller, erase suspend and resume modes (reading and programming another block during erase suspend), unlock bypass programming command (faster production/batch programming), temporary block unprotected mode, 64-bit security code of common flash interface, standby and automatic standby, 100,000 program/erase cycles/block, electronic signature manufacturer code: 0020h, top device code M29W160ET: 22C4h, bottom device code M29W160EB: 2249h.