The datasheet provides electrical, thermal, and mechanical specifications for ON Semiconductor MJW3281A (NPN) and MJW1302A (PNP) complementary silicon power…
The MJW3281A (NPN) and MJW1302A (PNP) are complementary silicon power transistors intended for high‑power audio, disk‑head positioners, and other linear applications. They are designed for up to 100 W audio frequency operation and feature low harmonic distortion and a high safe‑operating area.
Key specifications include a collector‑emitter voltage rating of 230 Vdc, continuous collector current of 15 A, power dissipation up to 200 W, and a typical transition frequency (fT) of 30 MHz. The devices are supplied in a TO‑247 case with detailed mechanical dimensions and thermal resistance values for junction‑to‑case and junction‑to‑ambient.
| Collector‑Emitter Voltage (VCEO) | 230 Vdc |
|---|---|
| Collector‑Base Voltage (VCBO) | 230 Vdc |
| Emitter‑Base Voltage (VEBO) | 5.0 Vdc |
| Continuous Collector Current (IC) | 15 A |
| Base Current (IB) | 1.5 A |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 0.7 °C/W |
| Thermal Resistance, Junction‑to‑Ambient (RθJA) | 40 °C/W |
| Transition Frequency (fT) | 30 MHz |
| DC Current Gain (hFE) Minimum | 45 |
| Package Type | TO‑247 |
The maximum collector‑emitter voltage (VCEO) is 230 Vdc.
The datasheet specifies a minimum hFE of 45 at a collector current of 8 A.
Both transistors are supplied in a TO‑247 case.