MBR3060/D is a Schottky diode produced by Semiconductor Components Industries, LLC with extremely low Vf, low power loss/high efficiency, highly stable oxide passivated junction and low stored charge, majority carrier conduction.
The document describes the MBR3060, an axial lead Schottky barrier rectifier designed for low-voltage, high-frequency applications such as inverters and free-wheeling diodes. It features epitaxial construction with oxide passivation and metal overlap contact to ensure low power loss and high efficiency.
The datasheet details maximum ratings including a peak repetitive reverse voltage of 60V and an average rectified forward current of 3.0A. It also provides typical electrical characteristics, thermal resistance values for various mounting methods, and package dimensions for the Case 59-09 plastic package.
| Average Rectified Forward Current | 3.0 A |
|---|---|
| Peak Repetitive Reverse Voltage | 60 V |
| Non-Repetitive Peak Surge Current | 125 A |
| Operating and Storage Junction Temperature Range | -65 to +150 °C |
The maximum average rectified forward current is 3.0 A.
The operating and storage junction temperature range is -65 to +150 °C.
The device is shipped in plastic bags containing 1000 units per bag.