The MPS5179 is ON Semiconductor's preferred device, a NPN Silicon High Frequency Transistor. This document provides a detailed list of the product's features and characteristics, including maximum ratings, functional operating conditions, packaging and shipping information.
This document is a datasheet for the MPS5179, an NPN silicon high frequency transistor offered by ON Semiconductor. It provides preferred device information and available Pb-free packages.
The text details the absolute maximum ratings, including collector-emitter voltage of 12 Vdc and continuous collector current of 50 mA. It also lists electrical characteristics such as DC current gain (hFE) ranging from 25 to 250 and a current-gain bandwidth product up to 2000 MHz.
| Collector-Emitter Voltage (Vceo) | 12 Vdc |
|---|---|
| Collector-Base Voltage (Vcspo) | 20 Vdc |
| Emitter-Base Voltage (VeBo) | 25 Vdc |
| Collector Current (Continuous Ic) | 50 mA |
| Total Device Dissipation @ Ta = 25°C | 200 W |
| Storage Temperature Range (Tsig) | -55 to +150 °C |
| DC Current Gain (hFE) Min/Max | 25 / 250 |
| Current-Gain Bandwidth Product (fT) | 900 to 2000 MHz |
The maximum continuous collector current is 50 mA.
The maximum total device dissipation is 200 W at 25°C.
The storage temperature range is from -55 to +150 °C.