The MPS650/D is NPN and PNP type integrated circuits, with a maximum collector-emitter voltage of 40/60 Vdc, a maximum collector-base voltage of 60/80 Vdc, a maximum emitter-base voltage of 5.0 Vdc, a maximum collector current of 2.0 Adc, and a maximum power dissipation of 625/5.0 mW. The maximum operating temperature is -55 to +150°C.
The document details the specifications for four NPN/PNP amplifier transistor models: MPS650, MPS651, MPS750, and MPS751. It highlights that MPS651 and MPS751 are preferred devices offering higher voltage ratings compared to their counterparts.
| Collector - Emitter Voltage (MPS650/750) | 40 Vdc |
|---|---|
| Collector - Emitter Voltage (MPS651/751) | 60 Vdc |
| Total Power Dissipation @ Ta = 25°C (MPS651/751) | 1.5 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
MPS651 and MPS751 are the preferred devices.
The devices operate and store within a junction temperature range of -55 to +150 °C.