IXGH 24N170 IXGT 24N170 is a NPN power MOSFET produced by IXYS. It is internally NPT structure, with high current handling capability, high power density, low on-resistance, suitable for switch power supply, motor drive and other applications.
This document is a technical datasheet for the IXGH24N170 Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It provides comprehensive data including features, applications, and advantages such as high current handling capability and MOS gate turn-on drive simplicity.
| Collector Current (25°C) | 50 A |
|---|---|
| Collector-Emitter Saturation Voltage | 3.3 V |
| Operating Temperature Range | -55 ... +150 °C |
| Package Weight (TO-247 AD) | 6 g |
The device is suitable for capacitor discharge circuits, AC motor speed control, DC servo drives, and switched-mode power supplies.
The typical turn-on delay time (td(on)) is 42 ns.