STMicroelectronis unique StripFET power MOSFET, has extremely high packing density, low resistance, rugged avalanche characteristics, and good manufacturing reproducibility.
This document provides technical specifications for the STB200NF03 and STP200NF03 N-channel 30V, 120A Power MOSFETs. These devices are designed for automotive applications and feature STMicroelectronics' unique Single Feature Size™ strip-based process. They are available in D2PAK, T2PAK, and TO-220 packages.
| Operating Junction Temperature | -55 to 175 °C |
|---|---|
| Output Capacitance | 1750 pF |
Yes, the document specifies these are automotive specific devices.
The maximum pulsed drain current is 480 A.