STP20NE06 is the latest development of STMicroelectronics' unique “Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
This document is a technical datasheet for the STP20NE06 and STP20NE06FP, which are N-channel 60V, 20A Power MOSFETs. These devices utilize STMicroelectronics' StripFET™ process to achieve low on-resistance and high packing density.
| Maximum Junction Temperature | 175 °C |
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