This document describes the features and characteristics of STP200NF04 and STB200NF04 MOSFETs, including low on-resistance, high packing density, and reliable avalanche characteristics.
This document provides technical specifications and application information for the STMicroelectronics STP200NF04, STB200NF04, and STB200NF04-1 N-channel MOSFETs. These devices are designed for high current and high switching speed applications, including automotive use.
| Drain-source Voltage (VDS) | 40 V |
|---|---|
| Drain Current (continuous) | 120 A |
| Total Dissipation (TC=25°C) | 310 W |
| Operating Junction Temperature Range | -55 to 175 °C |
The document lists high current, high switching speed, and automotive as primary applications.
The maximum pulsed drain current (IDM) is 480 A.
The devices are available in TO-220, D²PAK, and I²PAK packages.