This document describes a high-performance power MOSFET product designed by STMicroelectronics, which features low RDS(on), high voltage avalanche and dv/dt capability, as well as low gate charge and switching characteristics. It is suitable for high-current, high-speed switching and switch mode power supply applications.
The document describes a family of advanced N-channel 200V - 19A PowerMESH™ MOSFETs designed for high current and high speed switching applications. These devices feature an extremely high dv/dt capability, are 100% avalanche tested, and utilize a new high voltage benchmark process with minimized gate charge.
| Drain-source Voltage (VDS) | 200 V |
|---|---|
| Continuous Drain Current at Tc = 25°C | 19 A |
| Total Dissipation at Tc = 25°C | 125 W |
| Maximum Operating Junction Temperature | 150 °C |
| Thermal Resistance Junction-case (TO-220) | 3.57 °C/W |
They are designed for high current, high speed switching and switch mode power supplies (SMPS).
The typical RDS(on) is 0.15 Ohms.