The document describes the features and characteristics of the MDmesh™ MOSFET family, including low on-resistance, high dv/dt, and excellent avalanche capabilities.
This document describes the STP20NM60 series of MDmesh™ technology MOSFETs. The family combines Multiple Drain process with PowerMESH™ horizontal layout to achieve low on-resistance, high dv/dt capability, and excellent avalanche characteristics suitable for high voltage converters.
The datasheet provides absolute maximum ratings, electrical characteristics including dynamic parameters and source-drain diode specifications, safe operating area graphs, thermal impedance data, and mechanical dimensions for various package types.
| Max Operating Junction Temperature | 150 °C |
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The MDmesh™ technology associates the Multiple Drain process with PowerMESH™ horizontal layout.
Yes, all devices are 100% avalanche tested.