STP20N06 is a 60V low-resistance power MOSFET produced by STP. Its typical RDS(on) is 0.06 ohms and it supports repetitive avalanche testing. The maximum junction temperature is 175℃. This MOSFET is mainly used in high current, high frequency switching, relay driver, power regulator, DC-DC and DC-AC converter, motor control, audio amplifier and other applications.
This document provides comprehensive technical specifications for the STP20N06 and STP20NO6FI N-Channel Enhancement Mode Power MOS Transistors. It covers absolute maximum ratings, electrical characteristics including switching times and capacitance, avalanche ruggedness, and thermal resistance data for both TO-220 and ISOWATT220 packages.
The datasheet includes detailed application information suitable for high current, high speed switching, solenoid and relay drivers, regulators, DC-DC & DC-AC converters, motor control, audio amplifiers, and automotive environments. It also features safe operating area graphs, derating curves, and mechanical data dimensions.
| Thermal Resistance Junction-case | 1.88 °C/W |
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The device is intended for high current, high speed switching, solenoid and relay drivers, regulators, DC-DC & DC-AC converters, motor control, audio amplifiers, and automotive environments.
Yes, the STP20N06 features Avalanche Rugged Technology and is 100% avalanche tested.
The maximum operating junction temperature (Tj) is 175°C.