STMicroelectronics STP20NE10 N-Channel MOSFET Datasheet

STP20NE10 is a N-channel 100V 0.07Ω 20A TO-220 package STripFET MOSFET produced by SGS-THOMSON. The product has typical RDS(on) = 0.07 Ω, exceptional dv/dt capability, 100% avalanche tested, and application-oriented characteristics descriptions.


STMicroelectronics STP20NE10 N-Channel MOSFET Datasheet - cover page
Brand
STMicroelectronics
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
84 KB
Published
07 August, 2012
Updated
30 September, 2023
MD5 checksum
EDB51215C90F3F04147DEBC3A379898A

About this manual

This document is a technical datasheet for the STP20NE10, an N-channel Power MOSFET designed with SGS-THOMSON's unique strip-based process. The device features low on-resistance (0.07Q typical), rugged avalanche characteristics, and is suitable for applications such as solenoid drivers, motor control, audio amplifiers, DC-DC converters, and automotive environments.

What's inside

  • Description
  • Applications
  • Absolute Maximum Ratings
  • Thermal Data
  • Avalanche Characteristics
  • Electrical Characteristics
  • Switching Times
  • Source Drain Diode
  • Safe Operating Area
  • Mechanical Data

Specifications

Drain-source Voltage100 V
Continuous Drain Current @ 25°C20 A
Static Drain-source On Resistance0.07 Q
Package TypeTO-220
Total Dissipation @ 25°C90 W

Frequently asked questions

What are the applications for this MOSFET?

It is suitable for solenoid and relay drivers, motor control, audio amplifiers, DC-DC converters, and automotive environments.

What is the maximum junction temperature?

The maximum operating junction temperature (Tj) is 175 °C.

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