This document describes the features and characteristics of STP16NK65Z and STB16NK65Z-S, two N-channel 650V MOSFET products. These include low on-resistance, high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, etc. These products are suitable for high current, high-speed switching, and offline power supply applications.
This document provides a comprehensive technical overview of the STP16NK65Z and STB16NK65Z-S N-Channel 650V SuperMESH™ MOSFETs. These devices feature an optimized strip-based PowerMESH™ layout designed for high current, high-speed switching applications, particularly in off-line power supplies. Key features include extremely high dv/dt capability and built-in gate-source Zener diodes for protection against voltage transients.
| Continuous Drain Current (25°C) | 13 A |
|---|---|
| Total Dissipation (TC=25°C) | 190 W |
| Package Types | TO-220 / I2SPAK |
They are ideal for high current, high speed switching and off-line power supplies.
Yes, they feature integrated back-to-back Zener diodes to protect against gate-source voltage transients.