The STP190NF04 is a N-channel power MOSFET from STMicroelectronis with a typical RDS(on) of 3.9 mΩ and a maximum current of 120A. It supports TO-220, D2PAK and I2PAK packages and is used in high current, high switching speed and automotive applications.
This document provides preliminary technical data for the STP190NF04 and STB190NF04/STB190NF04-1 N-channel 40V - 3.9 mΩ - 120A Power MOSFETs available in D2PAK, I2PAK, and TO-220 packages. The devices feature STMicroelectronics' Single Feature Size™ strip-based process for high packing density and low on-resistance.
| Continuous Drain Current (25°C) | 120 A |
|---|---|
| Total Dissipation (Tc=25°C) | 310 W |
The device supports a continuous drain current of 120 A at both 25°C and 100°C case temperatures.
The total power dissipation is rated at 310 W when the temperature is 25°C.
The maximum lead temperature for soldering purposes is typically 300 °C.