This document describes a 30V N-channel power MOSFET designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. It features low RDS(ON) and low gate charge to maximize power conversion efficiency. Additionally, the MOSFET includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.
This document is a datasheet for the Fairchild FDP6644S and FDB6644S, which are 30V N-Channel PowerTrench SyncFET MOSFETs. These devices are designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies, maximizing power conversion efficiency with low Ron and low gate charge. The FDP6644S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.
| Drain-Source Voltage | 30 V |
|---|---|
| Gate-Source Voltage | +16 V |
| Operating Junction Temperature | -65 to +125 °C |
| Thermal Resistance Junction-to-Case | 2.1 °C/W |
| Package Types | TO-220, TO-263AB |
It is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.
Yes, the FDP6644S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.
The operating and storage junction temperature range is -65 to +125 °C.