FDP6670S/FDB6670S 30V N-Channel PowerTrench SyncFET™ is a 30V MOSFET designed by Fairchild Semiconductor Corporation with low RDS(ON) and low gate charge, suitable for synchronous DC:DC power supplies as a low-side switch.
This document describes the FDP6670S and FDB6670S devices, which are 30V N-Channel PowerTrench SyncFET MOSFETs designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. The devices feature an integrated Schottky body diode using Fairchild's monolithic SyncFET technology.
| Drain-Source Voltage | 30 V |
|---|---|
| Continuous Drain Current | 62 A |
| Pulsed Drain Current | 150 A |
| Total Power Dissipation @ Tj = 25°C | 62.5 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 21 °C/W |
The device supports a continuous drain current of 31 A.
The total power dissipation is rated at 62.5 W.
The device operates between -55°C and +150°C.