This document is about FDP6644/FDB6644 30V N-Channel PowerTrench MOSFET datasheet. The device has 50A, 30V, RDS(ON) = 8.5 mΩ @ VGS = 10 V, RDS(ON) = 10.5 mΩ @ VGS = 4.5 V, low gate charge (27 nC typical), fast switching speed, high performance trench technology, for extremely low RDS(ON) DC/DC power supply designs.
The Fairchild FDP6644/FDB6644 is a 30V N-Channel PowerTrench MOSFET designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These devices feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications, resulting in designs that are easy and safer to drive even at very high frequencies.
| Drain-Source Voltage | 30 V |
|---|---|
| Maximum Junction Temperature | +175 °C |
| Thermal Resistance Junction-to-Case | 1.8 °C/W |
| Gate Charge | 27 nC typical |
| On-Resistance (Vgs=10V) | 8.5 mΩ |
The device supports a maximum continuous drain current of 50 A.
The MOSFET has a maximum junction temperature rating of 175°C.
The total power dissipation is 83 W when the temperature is 25°C.