FDP603AL/FDB603AL are Fairchild's N-Channel logic level enhancement mode power field effect transistors with extremely low RDS(ON) and maximum junction temperature of 175°C.
This document provides technical specifications for the Fairchild FDP603AL and FDB603AL, which are N-Channel logic level enhancement mode power field effect transistors. Produced using Fairchild's proprietary high cell density DMOS technology, these devices are designed to minimize on-state resistance and are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits.
| Drain-Source Voltage | 30 V |
|---|---|
| Drain Current (Continuous) | 33 A |
| Total Power Dissipation | 50 W |
| Maximum Junction Temperature | 175°C |
| Package Types | TO-220 & TO-263AB |
These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits.
No, the rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.