FDP6670AL/FDB6670AL is a logic level MOSFET that features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. It is optimized for low gate charge, low RDS(ON) and fast switching speed.
This document is a technical datasheet for the Fairchild FDP6670AL and FDB6670AL, which are N-Channel Logic Level PowerTrench MOSFETs. These devices feature faster switching speeds and lower gate charge compared to comparable specifications, making them suitable for improving efficiency in DC/DC converters using synchronous or conventional switching PWM controllers.
The datasheet provides absolute maximum ratings, electrical characteristics, thermal data, and typical performance curves. Key features include a 30V drain-source voltage rating, an on-resistance of 6.5 mΩ at VGS=10V, and a maximum junction temperature of 175°C.
| Drain-Source Voltage (VDS) | 30 V |
|---|---|
| Gate-Source Voltage (VGS) | +20 V |
| Total Power Dissipation | 68 W |
| Operating Junction Temperature Range | -65 to +175 °C |
| Thermal Resistance (Junction-to-Case) | 2.2 °C/W |
The maximum junction temperature rating is 175°C.
Yes, they are designed specifically to improve the efficiency of DC/DC converters using synchronous or conventional switching PWM controllers.