FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™ is a MOSFET designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. It is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
The document describes the Fairchild FDP6670AS and FDB6670AS devices, which are 30V N-Channel PowerTrench SyncFET MOSFETs. These components are specifically designed to replace a single MOSFET and parallel Schottky diode in synchronous DC/DC power supplies to maximize conversion efficiency.
| Drain-Source Voltage | 30 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Continuous Drain Current | 31 A |
| Pulsed Drain Current | 150 A |
| Total Power Dissipation @ Tc = 25°C | 62.5 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 21 °C/W |
The typical total gate charge (Qg) is 28 nC.
The maximum continuous drain current is 31 A.
The maximum drain-source voltage is 30 V.
The total power dissipation is 62.5 W at 25°C.