FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrench MOSFET is a low RDS(ON), low gate charge, high switching speed N-channel logic level MOSFET produced by Fairchild Semiconductor Corporation. It adopts TO-220 FDP series and TO-263AB FDB series package.
This document provides technical specifications for the FDP7030BL and FDB7030BL N-Channel Logic Level MOSFETs. These devices feature PowerTrench technology, offering low on-resistance and fast switching speeds suitable for synchronous or conventional switching PWM controllers.
| Drain-Source Voltage | 30 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Continuous Drain Current | 60 A |
| Pulsed Drain Current | 180 A |
| Total Power Dissipation | 60 W |
| Operating Junction Temperature Range | -65 to +175 °C |
| Thermal Resistance, Junction-to-Case | 2.5 °C/W |
| Thermal Resistance, Junction-to-Ambient | 62.5 °C/W |
| Input Capacitance | 1760 pF |
| Output Capacitance | 440 pF |
| Reverse Transfer Capacitance | 185 pF |
| Turn-On Delay Time | 12 ns |
| Turn-On Rise Time | 12 ns |
| Turn-Off Delay Time | 30 ns |
| Turn-Off Fall Time | 19 ns |
| Total Gate Charge | 17 nC |
| Gate-Source Charge | 5.4 nC |
| Gate-Drain Charge | 6.4 nC |
| Diode Forward Voltage | 0.92 V |
| Diode Reverse Recovery Time | 30 ns |
The maximum junction temperature rating is 175°C.
The available package types are TO-220 and TO-263AB.
The derating factor is 0.4 W/°C.
The typical on-resistance is 6.8 mΩ.