FDP6035AL/FDB6035AL N-Channel Logic Level PowerTrench MOSFET is a N-Channel Logic Level MOSFET launched by Fairchild Semiconductor Corporation. It has 48 A, 30 V RDS(ON) = 12 mΩ @ VGS = 10 V, RDS(ON) = 14 mΩ @ VGS = 4.5 V, Critical DC electrical parameters specified at elevated temperature, High performance trench technology for extremely low RDS(ON), 175°C maximum junction temperature rating features.
The document describes the FDP6035AL and FDB6035AL as N-Channel Logic Level MOSFETs designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. These devices feature faster switching, lower gate charge, and are optimized for low on-resistance (Rds(on)) and fast switching speed.
| Drain-Source Voltage (Vdss) | 30 V |
|---|---|
| Gate-Source Voltage (Vgss) | +20 V |
| Continuous Drain Current (Id) | 48 A |
| Total Power Dissipation @ Ta = 25°C | 52 W |
| Operating Junction Temperature Range | -65 to +175 °C |
| Thermal Resistance, Junction-to-Case (RthJC) | 2.9 °C/W |
The device has a maximum junction temperature rating of 175°C.
The maximum continuous drain current is 48 A.
The maximum drain-source voltage rating is 30 V.