This document describes the features and characteristics of the FDP6021P/FDB6021P P-Channel power MOSFET, which is suitable for battery management, load switch, and voltage regulator applications.
The document details the specifications of the FDP6021P/FDB6021P series, a 20V P-Channel MOSFET utilizing Fairchild's low voltage PowerTrench process. These devices are designed specifically for power management applications such as battery management and load switches.
Key features include an extremely low on-resistance (Rds(on)) of 30 mΩ at Vgs = 4.5V, a maximum junction temperature rating of 175°C, and availability in TO-220 and TO-263AB packages.
| Drain-Source Voltage | -20 V |
|---|---|
| Gate-Source Voltage | +8 V |
| Continuous Drain Current (TO-263AB) | -28 A |
| Pulsed Drain Current | -80 A |
| Total Power Dissipation @ Tj = 25°C | 37 W |
| Operating Junction Temperature Range | -65 to +175 °C |
| Thermal Resistance (Junction-to-Case) | 4 °C/W |
The maximum junction temperature rating is 175°C.
The continuous drain current rating is -28 A.
The total power dissipation is 37 W at 25°C.