FDP5645/FDB5645 is a 60V N-Channel PowerTrench® MOSFET that features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
This document is a datasheet for the Fairchild FDP5645 and FDB5645 N-Channel MOSFETs. These devices feature PowerTrench technology, offering faster switching speeds and lower gate charge compared to comparable MOSFETs, which improves the efficiency of DC/DC converter designs using synchronous or conventional switching PWM controllers. The FDP5645 is available in a TO-220 package, while the FDB5645 is available in a TO-263AB/DPAK package.
| Drain-Source Voltage | 60 V |
|---|---|
| Total Power Dissipation | 125 W |
| Maximum Junction Temperature | +175 °C |
| Thermal Resistance (Junction-to-Case) | 1.2 °C/W |
| On-Resistance (Typical) | 0.0095 Ω |
They are designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Yes, the rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.