FDP4030L/FDB4030L is a N-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary high cell density DMOS technology. It has extremely low RDS(ON) and superior switching performance. This device is particularly suited for low voltage applications such as DC/DC converters, motor drivers and battery chargers.
The document describes N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary, high cell density, DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance, making them particularly suited for low voltage applications such as DC/DC converters and other battery-powered circuits where fast switching and low in-line power loss are needed.
The datasheet provides absolute maximum ratings, electrical characteristics including drain-source avalanche ratings, on/off characteristics, dynamic parameters, and switching characteristics. It also includes typical electrical characteristic graphs illustrating on-region behavior, resistance variation with temperature and gate voltage, transfer characteristics, body diode forward voltage, capacitance, safe operating areas, and transient thermal response.
| Drain-Source Voltage | 30 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Continuous Drain Current | 20 A |
| Pulsed Drain Current | 60 A |
| Total Power Dissipation @ Tj = 25°C | 37.5 W |
| Operating and Storage Temperature Range | -65 to +175 °C |
| Maximum Junction Temperature Rating | 175°C |
The devices are available in TO-220 and TO-263AB packages.
The maximum junction temperature rating is 175°C.