This document describes the features and characteristics of the FDP46N30 300V N-Channel MOSFET produced by Fairchild Semiconductor Corporation, including 46A current output, low gate charge, and fast switching speed.
This document is a technical datasheet for the Fairchild FDP46N30, an N-Channel MOSFET designed for high efficiency switched mode power supplies and active power factor correction. The device utilizes proprietary planar stripe DMOS technology to minimize on-state resistance while providing superior switching performance.
| Drain-Source Voltage | 300 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 46 A |
| Power Dissipation (Tc = 25°C) | 417 W |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-220 |
The FDP46N30 can withstand a single pulsed avalanche energy of up to 1205 mJ.