ISSI IS61LV5128 High-Speed CMOS Static RAM Datasheet

ISSI IS61LV5128 is a very high-speed, low power, 524,288-word by 8-bit CMOS static RAM. It has high clock speed, high reliability and low power consumption.


ISSI IS61LV5128 High-Speed CMOS Static RAM Datasheet - cover page
Brand
ISSI
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
9
File format
PDF
File size
73 KB
Published
04 May, 2012
Updated
30 September, 2023
MD5 checksum
CAE083B378E8208509E271930E619E0B

About this manual

The IS61LV5128 is a very high‑speed, low‑power 512K × 8 CMOS static RAM that operates from a single 3.3 V supply. It offers TTL‑compatible inputs, multiple power/ground pins for noise immunity, and optional CE and OE control for easy memory expansion.

The device is offered in 36‑pin 400‑mil SOJ, 36‑pin mini‑BGA, and 44‑pin TSOP (Type II) packages. The datasheet details pin assignments, absolute maximum ratings, timing parameters for read and write cycles, and power‑supply characteristics.

What's inside

  • Features
  • Description
  • Pin Configuration
  • Absolute Maximum Ratings
  • Operating Range
  • Power Supply Characteristics
  • DC Electrical Characteristics
  • Read Cycle Switching Characteristics
  • Write Cycle Switching Characteristics
  • Ordering Information

Specifications

Access time10, 12, 15 ns
Power dissipation (max)1.0 W
Standby power (typical)250 µW
Operating voltage3.3 V
Packages36‑pin 400‑mil SOJ, 36‑pin mini‑BGA, 44‑pin TSOP (Type II)
Input HIGH voltage (VIH)2.0 V

Frequently asked questions

What is the operating voltage of the IS61LV5128?

The device operates from a single 3.3 V power supply.

Which package types are available for the IS61LV5128?

It is offered in 36‑pin 400‑mil SOJ, 36‑pin mini‑BGA, and 44‑pin TSOP (Type II) packages.

What is the typical standby power consumption when CE is high?

Standby power can be reduced to about 250 µW typical.

What are the access time specifications?

The RAM provides access times of 10 ns, 12 ns, and 15 ns.

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