TN6725A is an NPN Darlington transistor designed for applications requiring extremely high current gain up to 1A. It can operate and store within a temperature range of -55°C to +150°C. The transistor has a continuous collector current of 1.2A, an emitter-base voltage of 60V, and a collector-base voltage of 50V. Additionally, it features thermal resistance and small signal characteristics.
The TN6725A is an NPN Darlington Transistor designed for applications requiring extremely high current gain at collector currents up to 1A. The device is packaged in a TO-226 package and is sourced from Process 05.
The document details the absolute maximum ratings, including a collector-emitter voltage of 50V and a continuous collector current of 1.2A. It also lists electrical characteristics for both OFF and ON states, such as breakdown voltages and DC current gain, along with small signal parameters and thermal resistance values.
| Package Type | TO-226 |
|---|---|
| Collector-Emitter Voltage | 50 V |
| Collector-Base Voltage | 60 V |
| Emitter-Base Voltage | 12 V |
| Collector Current - Continuous | 1.2 A |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Total Device Dissipation | 1 W |
| Thermal Resistance, Junction to Case | 50 °C/W |
| DC Current Gain (Ic = 1A, Vce = 5V) | 4000 - 40,000 |
The continuous collector current is rated at 1.2 A.
The operating and storage junction temperature range is -55 to +150 °C.
The collector-emitter breakdown voltage is 50 V.