This is a PDF file about BC807/BC808, introducing its electrical characteristics, absolute maximum ratings, application scenarios and other information.
This document provides the design specifications for the Fairchild Semiconductor BC807 and BC808 series of PNP epitaxial silicon transistors. These devices are suitable for switching and amplifier applications, including AF-driver stages and low power output stages.
The datasheet details absolute maximum ratings such as collector-emitter voltage and collector current, along with electrical characteristics like DC current gain and frequency response. It also includes typical characteristic curves and physical package dimensions for the SOT-23 form factor.
| Collector-Emitter Voltage (Max) | -50 V (BC807), -30 V (BC808) |
|---|---|
| Collector Current (DC) | -800 mA |
| Junction Temperature | 150 °C |
| DC Current Gain (Typ) | 630 |
They are suitable for switching and amplifier applications, specifically AF-driver stages and low power output stages.
The transistors are available in a SOT-23 package.