This document describes the features and characteristics of the BC856-BC860 PNP Epitaxial Silicon Transistor produced by Fairchild Semiconductor Corporation. It is suitable for switching and amplifier applications, can be automatically inserted in thick and thin-film circuits, and has low noise. It is complementary to BC846.
This document provides technical specifications for the Fairchild Semiconductor BC856 through BC860 series of PNP epitaxial silicon transistors. These devices are designed for switching and amplifier applications and are suitable for automatic insertion in thick and thin-film circuits.
The datasheet details absolute maximum ratings, electrical characteristics such as current gain and noise figure, typical performance characteristics with graphs, ordering information including device marking and package types (SOT-23), mechanical dimensions, trademarks, and a disclaimer regarding product use.
| Collector-Base Voltage (BC856) | -80 V |
|---|---|
| Collector-Emitter Voltage (BC856) | -65 V |
| Emitter-Base Voltage | 5 V |
| Collector Current (DC) | -100 mA |
| Collector Power Dissipation | 310 mw |
| Junction Temperature | 150 °C |
The BC856-BC860 PNP epitaxial silicon transistors are suitable for switching and amplifier applications.
The maximum DC collector current rating is -100 mA.