This document describes an NPN multi-chip general purpose amplifier device, designed for general purpose amplifier applications with a maximum collector current of 200mA. The device features a wide operating temperature range of -55°C to +150°C, and has high collector-emitter voltage and collector-base voltage.
This document is a technical datasheet for the Fairchild Semiconductor BC847S device. It describes an NPN Multi-Chip General Purpose Amplifier designed for applications with collector currents up to 200 mA.
The text provides comprehensive data including Absolute Maximum Ratings, Thermal Characteristics, and detailed Electrical Characteristics tables covering OFF characteristics, ON characteristics, and small signal parameters such as current gain-bandwidth product.
| Collector-Emitter Voltage (VCEO) | 45 V |
|---|---|
| Collector-Base Voltage (VCBO) | 50 V |
| Emitter-Base Voltage (VEBO) | 6.0 V |
| Collector Current (Continuous) | 200 mA |
| Total Device Dissipation (Pp) | 300 mW |
The device is designed for general purpose amplifier applications at collector currents to 200 mA.
Yes, the pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
The ratings are based on a maximum junction temperature of 150 degrees C.