BC846 - BC850 are NPN epitaxial silicon transistors suitable for switching and amplifier applications. They are suitable for automatic insertion in thick- and thin-film circuits. BC849 and BC850 are low noise. They complement the BC856 and BC860.
The document provides technical specifications for the BC846 to BC850 series of NPN epitaxial silicon transistors. These devices are designed for switching and amplifier applications and are suitable for automatic insertion in thick and thin-film circuits. The low noise variants, specifically the BC849 and BC850 models, are highlighted as complementary to other Fairchild products.
| Collector-Emitter Voltage (Vceo) | 65 V (BC846), 45 V (BC847/850), 30 V (BC848/849) |
|---|---|
| Collector Current (DC) | 100 mA |
| Collector Power Dissipation | 310 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -65 to 150 °C |
| DC Current Gain (hFE) Min. | 110 |
They are suitable for switching and amplifier applications.
The BC849 and BC850 models are noted as having low noise features.
The devices come in a SOT-23 package.