BC817/BC818 NPN Epitaxial Silicon Transistor is a device suitable for AF-Driver stages and low power output stages for switching and amplifier applications.
The document details the BC817 and BC818 NPN epitaxial silicon transistors, designed for switching and amplifier applications. These devices are suitable for AF-driver stages and low power output stages, serving as a complement to the BC807/BC808 series. They are available in SOT-23 packages.
| Collector-Base Voltage (BC817) | 50 V |
|---|---|
| Collector-Base Voltage (BC818) | 30 V |
| Collector-Emitter Voltage (BC817) | 45 V |
| Collector-Emitter Voltage (BC818) | 25 V |
| Collector Current (DC) | 800 mA |
| Collector Power Dissipation | 310 mW |
| Junction Temperature | 150 °C |
| Storage Temperature | -65 ~ 150 °C |
| DC Current Gain (hFE) Min | 100 |
| DC Current Gain (hFE) Typ | 630 |
| Current Gain Bandwidth Product | 100 MHz |
They are suitable for switching and amplifier applications, specifically AF-driver stages and low power output stages.
The device marking indicates the package is SOT-23.
The pin definitions are 1.Base, 2.Emitter, and 3.Collector.