This document introduces the UIS rating system for PowerMOS transistors, which is used to evaluate whether the transistor can withstand the UIS stress level
The document introduces the Combined Single-Pulse and Repetitive UIS Rating System developed by Fairchild Semiconductor. This system allows users to determine if their application lies within the rated capability of a power transistor by analyzing peak current, junction temperature, and time in avalanche. It addresses the limitations of energy-based ratings which vary with operating conditions.
Each individual pulse is considered a separate event and evaluated as if no other pulse existed.
The calculation results in a maximum allowable inductance of 8.45mH.