IRL640A is a power MOSFET with the following features: logic-level gate drive, avalanche rugged technology, rugged gate oxide technology, lower input capacitance, improved gate charge, extended safe operating area, lower leakage current, lower RDS(on).
This document is a datasheet for the Fairchild Semiconductor IRL640A, an N-channel power MOSFET. It outlines key features such as a 200V breakdown voltage, logic-level gate drive capability, and avalanche rugged technology.
The text provides absolute maximum ratings, electrical characteristics at 25°C, and source-drain diode ratings. It also includes detailed descriptions of various test circuits and waveforms used to verify performance parameters like capacitance, switching times, and thermal response.
| Package Type | TO-220 |
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