This document describes the features and characteristics of the Fairchild Semiconductor products HUF76439P3 and HUF76439S3S, including ultra-low on-resistance, temperature-compensated simulation models and thermal impedance models, as well as peak current vs pulse width curve and switching time vs RGS curve. Ordering information and absolute maximum ratings are also provided.
The document provides a comprehensive technical overview of the HUF76439P3 and HUF76439S3S N-Channel Logic Level UltraFET Power MOSFETs. Key features include ultra-low on-resistance (RDS(ON) = 0.012 Ohm typical at VGS = 10V), simulation models for PSPICE and SABER, and availability in JEDEC TO-220AB and TO-263AB packages. The devices are designed for high-efficiency switching applications.
| Drain to Source On Resistance (Typical) | 0.012 Ohm |
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The devices are available in JEDEC TO-220AB and TO-263AB packages.
The typical on-resistance is 0.012 Ohm when VGS is 10V.