This document describes the features and characteristics of the IRFM120A product, including avalanche rugged technology, lower input capacitance, improved gate charge, extended safe operating area, and lower leakage current. The product has lower leakage current and on-resistance, and is compatible with IEEE802.3af standard.
This document is a technical datasheet for the IRFM120A, an N-channel Power MOSFET manufactured by Fairchild Semiconductor. The device features IEEE802.3af compatible power delivery capabilities and utilizes Rugged Gate Oxide Technology to ensure reliability under high stress conditions.
| Drain-to-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Ta=25°C) | 2.3 A |
| Total Power Dissipation (Tj=25°C) | 24 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Gate Threshold Voltage (Typ) | 2.0 V |