HUF76629D3 and HUF76629D3S are 20A, 100V, 0.054 Ohm, N-channel, logic level UltraFET® power MOSFETs.
The document provides comprehensive electrical specifications for the HUF76629D3 (TO-251AA package) and HUF76629D3S (TO-252AA package) N-channel logic level power MOSFETs. Key features include ultra-low on-resistance of 0.054Ω at VGS=5V, a drain current capability of 20A, and operation across a temperature range of -55°C to 175°C.
| Drain Current Continuous (VGS = 5V) | 20 A |
|---|---|
| Drain to Source Voltage | 100 V |
| Operating and Storage Temperature | -55 to 175°C |
| Package Type HUF76629D3 | TO-251AA |
| Package Type HUF76629D3S | TO-252AA |
The maximum continuous drain current is 20A at TC=25°C.
The HUF76629D3 is in a TO-251AA package and the HUF76629D3S is in a TO-252AA package.
The maximum gate to source voltage rating is ±16V.