This document details the characteristics of the IRLS640A MOSFET, including absolute maximum ratings, thermal resistance, electrical characteristics, etc.
This document is a datasheet for the Fairchild Semiconductor IRLS640A, an N-channel power MOSFET. It lists absolute maximum ratings such as a drain-to-source voltage of 200V and a continuous drain current of 9.8A. Key features include logic-level gate drive, rugged gate oxide technology, and a low on-state resistance of 0.1458 Ohms typical.
The datasheet provides detailed electrical characteristics including breakdown voltage, threshold voltage, and capacitance values. It also includes graphical representations of output characteristics, transfer characteristics, and safe operating areas, along with specific test circuit diagrams for parameters like avalanche energy and diode recovery dv/dt.
| Drain-to-Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (Tj=25°C) | 9.8 A |
| On-State Resistance | 0.1458 Ohms (Typ.) |
| Gate Threshold Voltage | 1.0 to 20 V |
| Total Power Dissipation (Tj=25°C) | 40 W |
| Input Capacitance | 1310 pF (Typ.) |
The maximum drain-to-source voltage is 200 V.
The typical on-state resistance is 0.1458 Ohms.
Yes, the device features logic-level gate drive.