NDP5060L/NDB5060L is a logic level N-Channel enhancement mode power field effect transistor produced by Fairchild using high cell density DMOS technology. It has extremely low Rdson, fast switching speed and the ability to withstand high energy pulses. It is suitable for low voltage applications.
This document is a technical datasheet for the NDP5060L and NDB5060L, which are logic level N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary high cell density DMOS technology to minimize on-state resistance and provide superior switching performance.
| Drain Current (Continuous) | 26 A |
|---|---|
| Drain-Source Voltage | 60 V |
| On-State Resistance (Typical) | 0.05 Ω @ Vgs= 5 V |
| Maximum Junction Temperature | 175°C |
| Total Power Dissipation (25°C) | 68 W |
They are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits.
No, the rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.