This document describes the features and characteristics of Fairchild Semiconductor Corporation's HUFA76429D3 and HUFA76429D3S models, including ultra-low on-resistance, simulation models, peak current vs pulse width curve, UIS rating curve, and switching time vs RGS curve.
This document is a technical datasheet for the Fairchild Semiconductor HUFA76429D3 and HUFA76429D3S, which are 20A, 60V N-channel logic level UltraFET power MOSFETs. The devices are available in JEDEC TO-251AA and TO-252AA packages.
| Gate to Source Voltage | +/- 16 V |
|---|---|
| Continuous Drain Current (25°C) | 20 A |
| Power Dissipation | 110 W |
| Operating Temperature Range | -55 to 175 °C |
| Thermal Resistance Junction to Case (TO-251/TO-252) | 1.36 °C/W |
| Drain to Source On Resistance (Vgs=10V) | Max 0.027 Ω |
| Package Types | TO-251AA, TO-252AA |
The maximum continuous drain current is 20 A when Vgs = BV.
The devices are offered in TO-251AA and TO-252AA packages.
Yes, it has been designed to meet the extreme test conditions and environment demanded by the automotive industry.