Fairchild Semiconductor MTD3055V N-Channel Enhancement Mode Field Effect Transistor Datasheet

MTD3055V is an N-channel enhancement mode field effect transistor from MTD company, with a maximum drain current of 300mA, a maximum gate-drain voltage of 20V, and a maximum operating temperature of 125℃.


Fairchild Semiconductor MTD3055V N-Channel Enhancement Mode Field Effect Transistor Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
3
File format
PDF
File size
239 KB
Published
12 July, 2012
Updated
30 September, 2023
MD5 checksum
55B925E62BCDD0FB35109D2F7AC13A58

About this manual

This document is a datasheet for the Fairchild Semiconductor MTD3055V, an N-Channel Enhancement Mode Field Effect Transistor (MOSFET). It is designed to improve the efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. Key features include a 12A current rating, 60V voltage rating, and a low on-resistance (RDS(ON)) of 0.15Ω.

What's inside

  • Features
  • General Description
  • Thermal Characteristics
  • Package Ordering and Routing Information
  • Electrical Characteristics
  • Switching Characteristics
  • Ramp-Source Drive Characteristics

Specifications

Current Rating12 A
Voltage Rating60 V
On-Resistance (RDS(ON))0.15 Ω
Gate ChargeLow
Switching SpeedFast
Thermal Resistance (Junction-to-Ambient)38°C/W
Thermal Resistance (Junction-to-Ambient, Min Pad)96°C/W

Frequently asked questions

What is the primary application of the MTD3055V?

It is designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

What are the key advantages of this MOSFET?

It features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

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