The FDS9400A is a 30V P-Channel PowerTrench MOSFET from Fairchild Semiconductor Corporation. It has low gate charge (2.4nC typical), fast switching speed, high performance trench technology and extremely low RDS(ON) and is suitable for power management, load switch and battery protection applications.
The FDS9400A is a rugged P-Channel MOSFET utilizing Fairchild's advanced PowerTrench process. It is specifically optimized for power management applications requiring a wide range of gate drive voltage ratings from 4.5V to 25V. Key features include low gate charge, fast switching speed, and high performance trench technology for extremely low on-resistance.
| Drain-Source Voltage | -30 V |
|---|---|
| Gate-Source Voltage | +25 V |
| Continuous Drain Current | -3.4 A |
| Power Dissipation | 25 W |
| Operating Junction Temperature | 55 to +175 °C |
| Gate Threshold Voltage | -1 to -3 V |
| On-Resistance (Vgs=-10V) | 105 to 130 mΩ |
| Total Gate Charge | 2.4 nC |
The device is optimized for power management applications, specifically as a load switch and for battery protection.
The MOSFET is optimized for power management applications requiring a wide range of gate drive voltage ratings from 4.5V to 25V.
The maximum continuous drain current rating is -3.4 A.